SFT1202-TL-E
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- Mfr.Part #
- SFT1202-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 150V 2A TPFA
- Stock
- 4,391
- In Stock ：
- 4,391
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 165mV @ 100mA, 1A
- Power - Max :
- 1W
- Collector Emitter Voltage (VCEO) :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 180V
- JESD-609 Code :
- e6
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Configuration :
- Single
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Published :
- 2012
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Frequency - Transition :
- 140MHz
- Collector Emitter Breakdown Voltage :
- 150V
- hFE Min :
- 200
- Transition Frequency :
- 140MHz
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Operating Temperature :
- 150°C TJ
- Datasheets
- SFT1202-TL-E
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
SFT1202-TL-E Overview
In this device, the DC current gain is 200 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 165mV @ 100mA, 1A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
SFT1202-TL-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz
SFT1202-TL-E Applications
There are a lot of ON Semiconductor
SFT1202-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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