SGB20N60ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Configuration :

Single

Td (on/off) @ 25°C :

36ns/225ns

Turn Off Time-Nom (toff) :

313 ns

IGBT Type :

NPT

Power - Max :

179W

Terminal Position :

Single

Terminal Form :

Gull wing

Number of Terminations :

2

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

Base Part Number :

30N60

Pbfree Code :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Test Condition :

400V, 20A, 16 Ω, 15V

Voltage - Collector Emitter Breakdown (Max) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

100nC

Current - Collector (Ic) (Max) :

40A

Reach Compliance Code :

Unknown

Switching Energy :

440µJ (on), 330µJ (off)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 20A

Input Type :

Standard

ECCN Code :

EAR99

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Current - Collector Pulsed (Icm) :

80A

Turn On Time :

66 ns

Polarity/Channel Type :

N-Channel

Pin Count :

3

Additional Feature :

LOW CONDUCTION LOSS

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

26 Weeks

Transistor Application :

POWER CONTROL