STD70N10F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Continuous Drain Current (ID) :

60A

Turn-Off Delay Time :

65 ns

Pulsed Drain Current-Max (IDM) :

240A

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STD70N

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Pins :

3

Pin Count :

3

Rise Time :

20ns

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 30A, 10V

Fall Time (Typ) :

20 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation :

125W

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Turn On Delay Time :

30 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Series :

DeepGATE™, STripFET™

Power Dissipation-Max :

125W Tc

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Resistance :

19.5MOhm

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

100V

JESD-609 Code :

e3