STD7N52DK3

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Mfr.Part #
STD7N52DK3
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 525V 6A DPAK
Stock
5,715
In Stock :
5,715

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Drain Current-Max (Abs) (ID) :
6A
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Height :
2.4mm
Power Dissipation :
90W
Terminal Form :
Gull wing
Element Configuration :
Single
Additional Feature :
ULTRA-LOW RESISTANCE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
37 ns
Drain to Source Voltage (Vdss) :
525V
Terminal Finish :
Matte Tin (Sn) - annealed
Resistance :
1.15Ohm
Fall Time (Typ) :
22 ns
Pin Count :
3
Mount :
Surface Mount
REACH SVHC :
No SVHC
Pulsed Drain Current-Max (IDM) :
24A
Length :
6.6mm
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
870pF @ 50V
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
12 Weeks
Turn On Delay Time :
12 ns
Avalanche Energy Rating (Eas) :
100 mJ
Continuous Drain Current (ID) :
6A
Number of Terminations :
2
Series :
SuperFREDmesh3™
Rise Time :
22ns
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Vgs (Max) :
±30V
Number of Elements :
1
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Width :
6.2mm
Drain to Source Breakdown Voltage :
620V
Power Dissipation-Max :
90W Tc
Rds On (Max) @ Id, Vgs :
1.15 Ω @ 3A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
STD7
Lifecycle Status :
NRND (Last Updated: 7 months ago)
Threshold Voltage :
3.75V
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
ECCN Code :
EAR99
Operating Temperature :
150°C TJ
Datasheets
STD7N52DK3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD7N52DK3 from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:STD7, Operating Temperature:150°C TJ, STD7N52DK3 pinout, STD7N52DK3 datasheet PDF, STD7N52DK3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD7N52DK3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD7N52DK3


N-Channel Tape & Reel (TR) 1.15 Ω @ 3A, 10V ±30V 870pF @ 50V 33nC @ 10V 525V TO-252-3, DPak (2 Leads + Tab), SC-63

STD7N52DK3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=620V. And this device has 620V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 6A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 37 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 24A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. Operating this transistor requires a 525V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STD7N52DK3 Features


the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 24A.
a threshold voltage of 3.75V
a 525V drain to source voltage (Vdss)


STD7N52DK3 Applications


There are a lot of STMicroelectronics
STD7N52DK3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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