STD7NS20T4
- Mfr.Part #
- STD7NS20T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 7A DPAK
- Stock
- 205
- In Stock :
- 205
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 3V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 7A
- Voltage - Rated DC :
- 200V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Base Part Number :
- STD7
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Height :
- 2.4mm
- Width :
- 6.2mm
- Turn On Delay Time :
- 10 ns
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 7A
- Fall Time (Typ) :
- 12 ns
- Resistance :
- 400mOhm
- Number of Pins :
- 3
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Series :
- MESH OVERLAY™
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Power Dissipation :
- 45W
- Pulsed Drain Current-Max (IDM) :
- 28A
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 45W Tc
- Drain to Source Breakdown Voltage :
- 200V
- Pin Count :
- 3
- Rise Time :
- 15ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 540pF @ 25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.6mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- JEDEC-95 Code :
- TO-252AA
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Drain Current-Max (Abs) (ID) :
- 7A
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 3.5A, 10V
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Datasheets
- STD7NS20T4

N-Channel Tape & Reel (TR) 400m Ω @ 3.5A, 10V ±20V 540pF @ 25V 45nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD7NS20T4 Description
STMicroelectronics has developed an innovative series of power MOSFETs with remarkable performance using the newest high voltage MESH OVERLAYTM technology. The Company's exclusive edge termination structure, combined with the new patented STrip pattern, makes it appropriate for converters for lighting applications.
STD7NS20T4 Features
-
TYPICAL RDS(on) = 0.35 ?
-
EXTREMELY HIGH dv/dt CAPABILITY
-
100% AVALANCHE TESTED
-
VERY LOW INTRINSIC CAPACITANCES
-
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
STD7NS20T4 Applications
-
HIGH CURRENT, HIGH-SPEED SWITCHING
-
SWITCH-MODE POWER SUPPLIES (SMPS)
-
DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
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