STD888T4
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- Mfr.Part #
- STD888T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A DPAK
- Stock
- 8,597
- In Stock ：
- 8,597
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- STD888
- Max Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 1.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Width :
- 6.2mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 1V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Height :
- 2.4mm
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 15W
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- JEDEC-95 Code :
- TO-252AA
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Length :
- 6.6mm
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 10A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power Dissipation :
- 15W
- Collector Emitter Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Digi-Reel®
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- STD888T4
PNP 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Digi-Reel® Surface Mount
STD888T4 Overview
This device has a DC current gain of 100 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.2V @ 500mA, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 30V volts can be used.A maximum collector current of 5A volts is possible.
STD888T4 Features
the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V
STD888T4 Applications
There are a lot of STMicroelectronics
STD888T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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