STD95N4F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Resistance :

5.8mOhm

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

400 mJ

FET Type :

N-Channel

Pin Count :

3

Base Part Number :

STD95

Turn On Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Turn-Off Delay Time :

40 ns

Vgs (Max) :

±20V

Fall Time (Typ) :

15 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Power Dissipation :

110W

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rise Time :

50ns

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Series :

STripFET™ III

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Drain to Source Breakdown Voltage :

40V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

80A

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Power Dissipation-Max :

110W Tc

Packaging :

Tape and Reel (TR)