STD96N3LLH6
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- Mfr.Part #
- STD96N3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A DPAK
- Stock
- 41,853
- In Stock ：
- 41,853
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Operating Temperature :
- 175°C TJ
- Base Part Number :
- STD96
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 4.2mOhm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 91ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 5.5V 10V
- Power Dissipation :
- 70W
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 80A
- FET Type :
- N-Channel
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Turn On Delay Time :
- 19 ns
- Fall Time (Typ) :
- 23.4 ns
- Transistor Element Material :
- SILICON
- Series :
- DeepGATE™, STripFET™ VI
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Drain to Source Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 24.5 ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 40A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 70W Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Vgs (Max) :
- ±20V
- Datasheets
- STD96N3LLH6
N-Channel Tape & Reel (TR) 4.2m Ω @ 40A, 10V ±20V 2200pF @ 25V 20nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD96N3LLH6 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 24.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5.5V 10V).
STD96N3LLH6 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24.5 ns
STD96N3LLH6 Applications
There are a lot of STMicroelectronics
STD96N3LLH6 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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