STGB30H60DF

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Surface Mount

Number of Terminations :

2

Current - Collector Pulsed (Icm) :

120A

ECCN Code :

EAR99

Number of Elements :

1

Reverse Recovery Time :

53 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

37ns/146ns

Turn On Time :

51.1 ns

Collector Emitter Breakdown Voltage :

600V

Turn Off Time-Nom (toff) :

223 ns

Test Condition :

400V, 30A, 10 Ω, 15V

Max Collector Current :

60A

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Base Part Number :

STGB30

Switching Energy :

383μJ (on), 293μJ (off)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power - Max :

260W

Packaging :

Tape and Reel (TR)

Transistor Application :

POWER CONTROL

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 30A

IGBT Type :

Trench Field Stop

Collector Emitter Voltage (VCEO) :

2V

Input Type :

Standard

Factory Lead Time :

20 Weeks

Gate Charge :

149nC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Max Power Dissipation :

260W

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Max Breakdown Voltage :

600V

Mount :

Surface Mount

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ