STGP19NC60H
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- Mfr.Part #
- STGP19NC60H
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 40A 130W TO220
- Stock
- 5,602
- In Stock ：
- 5,602
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Gate-Emitter Voltage-Max :
- 20V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 600V
- Width :
- 4.6mm
- Gate-Emitter Thr Voltage-Max :
- 5.75V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Pulsed (Icm) :
- 60A
- Gate Charge :
- 53nC
- Turn-Off Delay Time :
- 97 ns
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 12A
- Package / Case :
- TO-220-3
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Td (on/off) @ 25°C :
- 25ns/97ns
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 2.5V
- Transistor Application :
- POWER CONTROL
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Test Condition :
- 390V, 12A, 10 Ω, 15V
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Power Dissipation :
- 130W
- Turn On Delay Time :
- 25 ns
- Polarity/Channel Type :
- N-Channel
- Turn On Time :
- 32 ns
- Lead Free :
- Lead Free
- Series :
- PowerMESH™
- Length :
- 10.4mm
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Height :
- 15.75mm
- Reverse Recovery Time :
- 31ns
- Max Collector Current :
- 40A
- Turn Off Time-Nom (toff) :
- 272 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Power Dissipation :
- 130W
- Element Configuration :
- Single
- Switching Energy :
- 85μJ (on), 189μJ (off)
- Base Part Number :
- STGP19
- Rise Time :
- 7ns
- Input Type :
- Standard
- Datasheets
- STGP19NC60H
STGP19NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
These devices are ultra-high speed IGBT. They use advanced Power Mesh fabrication technology to achieve an excellent tradeoff between switching performance and low-open state behavior.
STGP19NC60HD Features
Low on-voltage drop (VCE(sat))
Very soft Ultrafast recovery anti-parallel diode
STGP19NC60HD Application
Optimized for hard-switching applications up to 20 kHz
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