STGW20NC60V
- Mfr.Part #
- STGW20NC60V
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 60A 200W TO247
- Stock
- 4,392
- In Stock :
- 4,392
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Test Condition :
- 390V, 20A, 3.3 Ω, 15V
- Gate-Emitter Voltage-Max :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Switching Energy :
- 220μJ (on), 330μJ (off)
- Turn On Time :
- 42.5 ns
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-247AC
- Mounting Type :
- Through Hole
- Gate Charge :
- 100nC
- Td (on/off) @ 25°C :
- 31ns/100ns
- Voltage - Rated DC :
- 600V
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 2.5V
- Gate-Emitter Thr Voltage-Max :
- 5.75V
- Transistor Application :
- POWER CONTROL
- Continuous Collector Current :
- 30A
- Rise Time :
- 11ns
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Input Type :
- Standard
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Current Rating :
- 30A
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 20A
- Factory Lead Time :
- 8 Weeks
- Turn-Off Delay Time :
- 100 ns
- Radiation Hardening :
- No
- Max Power Dissipation :
- 200W
- Turn On Delay Time :
- 31 ns
- Width :
- 5.15mm
- Mount :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 100A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Collector Emitter Breakdown Voltage :
- 600V
- Number of Elements :
- 1
- Power Dissipation :
- 200W
- Series :
- PowerMESH™
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- STGW20
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Turn Off Time-Nom (toff) :
- 280 ns
- Height :
- 20.15mm
- Length :
- 15.75mm
- Weight :
- 38.000013g
- Max Collector Current :
- 60A
- Datasheets
- STGW20NC60V

STGW20NC60V datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGW20NC60V Description
This kind of IGBT STGW20NC60V adopts advanced PowerMesh fabrication technology, which achieves an excellent tradeoff between switching performance and low-conduction state behavior.
STGW20NC60V Features
? High frequency operation up to 50 kHz
? Lower CRES / CIES ratio (no cross-conduction susceptibility)
? High current capability
STGW20NC60V Applications
? High frequency inverters
? UPS, motor drivers
? HF, SMPS and PFC in both hard switch and resonant topologies
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