STN83003
- Mfr.Part #
- STN83003
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A SOT223
- Stock
- 55
- In Stock :
- 55
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Height :
- 1.8mm
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 500mA
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1V
- Max Breakdown Voltage :
- 400V
- Emitter Base Voltage (VEBO) :
- 12V
- Width :
- 3.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 weeks ago)
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Packaging :
- Cut Tape (CT)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.6W
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- JESD-30 Code :
- R-PDSO-G4
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- STN83
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 16 @ 350mA 5V
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 400V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.6W
- Terminal Finish :
- MATTE TIN
- Transistor Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 400V
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Max Collector Current :
- 1.5A
- Operating Temperature :
- 150°C TJ
- Length :
- 6.5mm
- Datasheets
- STN83003

NPN 150°C TJ 1mA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
STN83003 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 350mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 1.5A volts.
STN83003 Features
the DC current gain for this device is 16 @ 350mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 500mV @ 100mA, 500mA
the emitter base voltage is kept at 12V
STN83003 Applications
There are a lot of STMicroelectronics
STN83003 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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