TIP41B
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- Mfr.Part #
- TIP41B
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 6A TO220-3
- Stock
- 384
- In Stock ：
- 384
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- Transition Frequency :
- 3MHz
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Height :
- 15.75mm
- Transistor Element Material :
- SILICON
- hFE Min :
- 30
- Width :
- 4.82mm
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Length :
- 10.28mm
- Max Collector Current :
- 6A
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- 700µA
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Saturation Voltage :
- 1.5V
- Published :
- 2005
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 80V
- Current Rating :
- 6A
- Packaging :
- Tube
- Voltage - Rated DC :
- 80V
- Element Configuration :
- Single
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 2W
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- TIP41
- Datasheets
- TIP41B
NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP41BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 600mA, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 6A volts.
TIP41BG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
TIP41BG Applications
There are a lot of ON Semiconductor
TIP41BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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