UNR411E00A

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max :

300mW

Resistor - Emitter Base (R2) :

22 kOhms

Supplier Device Package :

NS-B1

Lead Free :

Lead Free

Published :

2003

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Voltage - Rated DC :

-50V

Current - Collector (Ic) (Max) :

100mA

Mount :

Through Hole

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

50V

Transistor Type :

PNP - Pre-Biased

Resistor - Base (R1) :

47 kOhms

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Box (TB)

Frequency - Transition :

80MHz

Max Power Dissipation :

300mW

Mounting Type :

Through Hole

Max Breakdown Voltage :

50V

Package / Case :

3-SSIP

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Current Rating :

-100mA

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

250mV