US6X3TR
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- Mfr.Part #
- US6X3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 3A TUMT6
- Stock
- 2,400
- In Stock ：
- 2,400
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 12V
- Package / Case :
- 6-SMD, Flat Leads
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 6
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 400mW
- Number of Terminations :
- 6
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Pins :
- 6
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Terminal Finish :
- TIN COPPER
- Collector Base Voltage (VCBO) :
- 15V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Current - Collector (Ic) (Max) :
- 3A
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- hFE Min :
- 270
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- US6X
- Collector Emitter Voltage (VCEO) :
- 250mV
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 360MHz
- Gain Bandwidth Product :
- 360MHz
- JESD-609 Code :
- e2
- Datasheets
- US6X3TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6X3TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 30mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 3A volts.
US6X3TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
US6X3TR Applications
There are a lot of ROHM Semiconductor
US6X3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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