ZTX655STOA
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- Mfr.Part #
- ZTX655STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A E-LINE
- Stock
- 36,798
- In Stock ：
- 36,798
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.29.00.95
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSIP-W3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1A
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- ZTX655
- Transistor Type :
- NPN
- Package / Case :
- E-Line-3, Formed Leads
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Qualification Status :
- Not Qualified
- Height :
- 4.01mm
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 150V
- Continuous Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 150V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Length :
- 4.77mm
- Mount :
- Through Hole
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 5V
- ECCN Code :
- EAR99
- Transition Frequency :
- 30MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Published :
- 2012
- Polarity/Channel Type :
- NPN
- Width :
- 2.41mm
- Gain Bandwidth Product :
- 30MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 150V
- Terminal Form :
- Wire
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 1A
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 500mV
- Weight :
- 453.59237mg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Datasheets
- ZTX655STOA
NPN -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX655STOA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 500mA 5V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 30MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
ZTX655STOA Features
the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 30MHz
ZTX655STOA Applications
There are a lot of Diodes Incorporated
ZTX655STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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