ZXTN2018FTA
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- Mfr.Part #
- ZXTN2018FTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A SOT23-3
- Stock
- 6,061
- In Stock ：
- 6,061
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Mount :
- Surface Mount
- Width :
- 1.4mm
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1.56W
- Voltage - Rated DC :
- 60V
- Terminal Position :
- Dual
- Current Rating :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 140V
- Continuous Collector Current :
- 5A
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 7V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Power - Max :
- 1.2W
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 300mA, 6A
- Length :
- 3.05mm
- Transistor Application :
- SWITCHING
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- 45mV
- Power Dissipation :
- 1.56W
- Gain Bandwidth Product :
- 130MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Frequency :
- 130MHz
- Base Part Number :
- ZXTN2018
- Height :
- 1mm
- Max Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Published :
- 2006
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 3
- Max Collector Current :
- 5A
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 130MHz
- Element Configuration :
- Single
- Datasheets
- ZXTN2018FTA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN2018FTA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 45mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 300mA, 6A.A 5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTN2018FTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 45mV
the vce saturation(Max) is 210mV @ 300mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 130MHz
ZXTN2018FTA Applications
There are a lot of Diodes Incorporated
ZXTN2018FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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