ZXTN2020FTA
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- Mfr.Part #
- ZXTN2020FTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A SOT23-3
- Stock
- 3,111
- In Stock ：
- 3,111
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Width :
- 1.4mm
- Voltage - Rated DC :
- 100V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 15 Weeks
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 100
- Frequency :
- 130MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Max Power Dissipation :
- 1.56W
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZXTN2020
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Transition Frequency :
- 130MHz
- Length :
- 3.05mm
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Termination :
- SMD/SMT
- Height :
- 1mm
- Power - Max :
- 1.2W
- Gain Bandwidth Product :
- 130MHz
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- 150mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 160V
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 400mA, 4A
- Collector Emitter Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Current Rating :
- 4A
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 4A
- Pbfree Code :
- yes
- Published :
- 2006
- Power Dissipation :
- 1.56W
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Datasheets
- ZXTN2020FTA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN2020FTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 150mV @ 400mA, 4A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
ZXTN2020FTA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 130MHz
ZXTN2020FTA Applications
There are a lot of Diodes Incorporated
ZXTN2020FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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