ZXTN25020DFHTA
- Mfr.Part #
- ZXTN25020DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 4.5A SOT23-3
- Stock
- 2,735
- In Stock :
- 2,735
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Max Collector Current :
- 4.5A
- Width :
- 1.4mm
- Power Dissipation :
- 1.81W
- Base Part Number :
- ZXTN25020D
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.81W
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- 265mV
- Number of Elements :
- 1
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 265mV @ 90mA, 4.5A
- Voltage - Rated DC :
- 20V
- Max Breakdown Voltage :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 15 Weeks
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 100V
- Published :
- 2006
- Transition Frequency :
- 215MHz
- Gain Bandwidth Product :
- 215MHz
- Element Configuration :
- Single
- Current Rating :
- 4.5A
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Length :
- 3.05mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 20V
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Turn Off Time-Max (toff) :
- 425ns
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 20V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- REACH SVHC :
- No SVHC
- Frequency :
- 215MHz
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Height :
- 1mm
- Power - Max :
- 1.25W
- Datasheets
- ZXTN25020DFHTA

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25020DFHTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 265mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 265mV @ 90mA, 4.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4.5A).215MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 4.5A volts.
ZXTN25020DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 265mV
the vce saturation(Max) is 265mV @ 90mA, 4.5A
the emitter base voltage is kept at 7V
the current rating of this device is 4.5A
a transition frequency of 215MHz
ZXTN25020DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25020DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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