ZXTN25040DFLTA
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- Mfr.Part #
- ZXTN25040DFLTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A SOT23-3
- Stock
- 7,931
- In Stock ：
- 7,931
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Frequency :
- 190MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 190MHz
- Collector Emitter Saturation Voltage :
- 85mV
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity/Channel Type :
- NPN
- Base Part Number :
- ZXTN25040D
- Pin Count :
- 3
- Power Dissipation :
- 350mW
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 40V
- Current Rating :
- 1.5A
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 40V
- Weight :
- 7.994566mg
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 350mW
- Packaging :
- Tape and Reel (TR)
- Published :
- 2006
- Collector Base Voltage (VCBO) :
- 130V
- Height :
- 1mm
- Transition Frequency :
- 190MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Width :
- 1.4mm
- Max Collector Current :
- 1.5A
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Length :
- 3.05mm
- Collector Emitter Voltage (VCEO) :
- 130V
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Continuous Collector Current :
- 1.5A
- Emitter Base Voltage (VEBO) :
- 7V
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 285mV @ 400mA, 4A
- Factory Lead Time :
- 15 Weeks
- Datasheets
- ZXTN25040DFLTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25040DFLTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 10mA 2V.With a collector emitter saturation voltage of 85mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 285mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.A transition frequency of 190MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
ZXTN25040DFLTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 285mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 1.5A
a transition frequency of 190MHz
ZXTN25040DFLTA Applications
There are a lot of Diodes Incorporated
ZXTN25040DFLTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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