ZXTN25100DFHTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

180V

Transition Frequency :

175MHz

Power - Max :

1.25W

Transistor Element Material :

SILICON

Gain Bandwidth Product :

175MHz

Max Power Dissipation :

1.81W

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

330mV @ 250mA, 2.5A

Max Collector Current :

2.5A

Height :

1mm

Collector Emitter Saturation Voltage :

330mV

Factory Lead Time :

11 Weeks

Published :

2006

Collector Emitter Voltage (VCEO) :

100V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

JESD-609 Code :

e3

Max Breakdown Voltage :

100V

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

7V

Polarity/Channel Type :

NPN

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 10mA 2V

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency :

175MHz

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Terminations :

3

Base Part Number :

ZXTN25100D

Transistor Type :

NPN

REACH SVHC :

No SVHC

Power Dissipation :

1.81W

Length :

3.05mm

Weight :

7.994566mg

Current - Collector Cutoff (Max) :

50nA ICBO

Radiation Hardening :

No

Terminal Position :

Dual

Width :

1.4mm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pbfree Code :

yes

Element Configuration :

Single