ZXTN617MATA
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- Mfr.Part #
- ZXTN617MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 15V 4.5A DFN2020B-3
- Stock
- 62,246
- In Stock ：
- 62,246
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 15V
- Package / Case :
- 3-UDFN
- Base Part Number :
- ZXTN617MA
- JESD-609 Code :
- e4
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 280mV @ 50mA, 4.5A
- Transition Frequency :
- 120MHz
- Power Dissipation :
- 2.45W
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 25nA
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 5A
- Max Power Dissipation :
- 3W
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Published :
- 2016
- Number of Elements :
- 1
- Contact Plating :
- Gold
- Element Configuration :
- Single
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 3A 2V
- Number of Terminations :
- 3
- Additional Feature :
- High Reliability
- Emitter Base Voltage (VEBO) :
- 7V
- Gain Bandwidth Product :
- 120MHz
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 200mV
- Collector Emitter Voltage (VCEO) :
- 15V
- Power - Max :
- 1.5W
- Transistor Type :
- NPN
- Continuous Collector Current :
- 4.5A
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 120MHz
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 15V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- ZXTN617MATA
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Tape & Reel (TR) Surface Mount
ZXTN617MATA Overview
This device has a DC current gain of 200 @ 3A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 280mV @ 50mA, 4.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 5A volts is possible.
ZXTN617MATA Features
the DC current gain for this device is 200 @ 3A 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 280mV @ 50mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
ZXTN617MATA Applications
There are a lot of Diodes Incorporated
ZXTN617MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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