ZXTP2012ASTZ
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- Mfr.Part #
- ZXTP2012ASTZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 60V 3.5A E-LINE
- Stock
- 5,596
- In Stock ：
- 5,596
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Height :
- 4.01mm
- Frequency :
- 120MHz
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Wire
- Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Width :
- 2.41mm
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 1W
- Package / Case :
- E-Line-3, Formed Leads
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -210mV
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Published :
- 2006
- Radiation Hardening :
- No
- Transition Frequency :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 3.5A
- Pbfree Code :
- No
- Length :
- 4.77mm
- Pin Count :
- 3
- Max Breakdown Voltage :
- 60V
- Packaging :
- Tape and Box (TB)
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- hFE Min :
- 100
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 120MHz
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Datasheets
- ZXTP2012ASTZ
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZXTP2012ASTZ Overview
DC current gain in this device equals 100 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 210mV @ 400mA, 4A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZXTP2012ASTZ Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
ZXTP2012ASTZ Applications
There are a lot of Diodes Incorporated
ZXTP2012ASTZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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