ZXTP25012EFHTA
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- Mfr.Part #
- ZXTP25012EFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A SOT23-3
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Flat
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Max Frequency :
- 310MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Length :
- 3.04mm
- Collector Emitter Voltage (VCEO) :
- 12V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 12V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -210mV
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 310MHz
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 12V
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 1.25W
- Transition Frequency :
- 310MHz
- Max Power Dissipation :
- 1.81W
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Max Collector Current :
- 4A
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 12V
- Emitter Base Voltage (VEBO) :
- 7V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.4mm
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Base Part Number :
- ZXTP25012E
- Terminal Position :
- Dual
- Published :
- 2007
- Mount :
- Surface Mount
- Height :
- 1.02mm
- Pin Count :
- 3
- Datasheets
- ZXTP25012EFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25012EFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -210mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 310MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTP25012EFHTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 310MHz
ZXTP25012EFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25012EFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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