BSD223PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Feedback Cap-Max (Crss) :

22 pF

Base Part Number :

BSD223

Length :

2mm

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.39A

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

0.62nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Reference Standard :

AEC-Q101

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

3.8 ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

FET Feature :

Logic Level Gate

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

5.1 ns

Package / Case :

6-VSSOP, SC-88, SOT-363

Transistor Element Material :

SILICON

Width :

1.25mm

Current Rating :

-350mA

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

56pF @ 15V

Voltage - Rated DC :

-20V

Max Dual Supply Voltage :

-20V

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.2V @ 1.5μA

Series :

OptiMOS™

Rise Time :

5ns

Mount :

Surface Mount

ECCN Code :

EAR99

Continuous Drain Current (ID) :

390mA

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 390mA, 4.5V

Number of Pins :

6

HTS Code :

8541.21.00.95

Mounting Type :

Surface Mount

Max Power Dissipation :

250mW

Gate to Source Voltage (Vgs) :

12V

Published :

2002

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

800μm

FET Technology :

METAL-OXIDE SEMICONDUCTOR