BSD235NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

500mW

Turn-Off Delay Time :

4.5 ns

Published :

2013

Base Part Number :

BSD235

Max Dual Supply Voltage :

20V

Threshold Voltage :

700mV

Gate Charge (Qg) (Max) @ Vgs :

0.32nC @ 4.5V

Halogen Free :

Halogen Free

Radiation Hardening :

No

Continuous Drain Current (ID) :

950mA

Height :

1mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Width :

1.25mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

500mW

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

3.6ns

Input Capacitance (Ciss) (Max) @ Vds :

63pF @ 10V

Drain-source On Resistance-Max :

0.35Ohm

Rds On (Max) @ Id, Vgs :

350m Ω @ 950mA, 4.5V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.2V @ 1.6μA

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Reference Standard :

AEC-Q101

JESD-609 Code :

e3

Number of Pins :

6

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

3.8 ns

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Max Junction Temperature (Tj) :

150°C

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

0.95A

Factory Lead Time :

10 Weeks

Number of Terminations :

6

ECCN Code :

EAR99

Series :

OptiMOS™

Package / Case :

6-VSSOP, SC-88, SOT-363

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Length :

2mm

Operating Temperature :

-55°C~150°C TJ