BSF024N03LT3GXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Turn-Off Delay Time :

29 ns

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 20A, 10V

Operating Temperature :

-40°C~150°C TJ

Series :

OptiMOS™

Terminal Position :

BOTTOM

Vgs (Max) :

±20V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 15V

Turn On Delay Time :

5.7 ns

Pin Count :

3

ECCN Code :

EAR99

Radiation Hardening :

No

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Published :

2011

Power Dissipation :

2.2W

Continuous Drain Current (ID) :

15A

Package / Case :

3-WDSON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Pulsed Drain Current-Max (IDM) :

400A

Rise Time :

5.6ns

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

15A Ta 106A Tc

Fall Time (Typ) :

4.8 ns

Number of Terminations :

3

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Mount :

Surface Mount

Power Dissipation-Max :

2.2W Ta 42W Tc