BSF035NE2LQXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 30A, 10V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

69A

HTS Code :

8541.29.00.95

Number of Elements :

1

ECCN Code :

EAR99

Series :

OptiMOS™

Mount :

Surface Mount

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

JESD-609 Code :

e4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

22A Ta 69A Tc

Vgs (Max) :

±20V

Terminal Form :

NO LEAD

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drain-source On Resistance-Max :

0.0046Ohm

Package / Case :

3-WDSON

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1862pF @ 12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2.2W Ta 28W Tc

Drain to Source Breakdown Voltage :

25V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

22A

Avalanche Energy Rating (Eas) :

50 mJ

Published :

2013

Pulsed Drain Current-Max (IDM) :

276A

Factory Lead Time :

26 Weeks

Terminal Finish :

Silver/Nickel (Ag/Ni)

Number of Pins :

3