BSF083N03LQG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

13A

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

40

Avalanche Energy Rating (Eas) :

30 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 15V

Pulsed Drain Current-Max (IDM) :

212A

JESD-30 Code :

R-MBCC-N3

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0142Ohm

Drain to Source Voltage (Vdss) :

30V

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

13A Ta 53A Tc

Terminal Form :

NO LEAD

Pin Count :

3

Packaging :

Tape and Reel (TR)

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.2W Ta 36W Tc

Published :

2009

Reach Compliance Code :

Compliant

Package / Case :

3-WDSON

Mounting Type :

Surface Mount

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 20A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED