BSO080P03NS3GXUMA1
- Mfr.Part #
- BSO080P03NS3GXUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 12A 8DSO
- Stock
- 21,177
- In Stock :
- 21,177
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 6750pF @ 15V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Voltage (Vdss) :
- 30V
- Terminal Form :
- Gull wing
- Series :
- OptiMOS™
- Vgs (Max) :
- ±25V
- Pin Count :
- 8
- Halogen Free :
- Halogen Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Factory Lead Time :
- 18 Weeks
- Published :
- 2011
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 81nC @ 10V
- Vgs(th) (Max) @ Id :
- 3.1V @ 150μA
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 25V
- Rise Time :
- 47ns
- Continuous Drain Current (ID) :
- 14.8A
- Number of Pins :
- 8
- Power Dissipation :
- 1.6W
- Power Dissipation-Max :
- 1.6W Ta
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 14.8A, 10V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Max Dual Supply Voltage :
- -30V
- Number of Terminations :
- 8
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- FET Type :
- P-Channel
- Datasheets
- BSO080P03NS3GXUMA1

P-Channel Tape & Reel (TR) 8m Ω @ 14.8A, 10V ±25V 6750pF @ 15V 81nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
BSO080P03NS3GXUMA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6750pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14.8A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Powered by -30V, it supports the maximal dual supply voltage.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
BSO080P03NS3GXUMA1 Features
a continuous drain current (ID) of 14.8A
a 30V drain to source voltage (Vdss)
BSO080P03NS3GXUMA1 Applications
There are a lot of Infineon Technologies
BSO080P03NS3GXUMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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