BSO080P03SNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Terminations :

8

Series :

OptiMOS™

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

12.6A Ta

Feedback Cap-Max (Crss) :

1500 pF

Gate Charge (Qg) (Max) @ Vgs :

136nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

8m Ω @ 14.9A, 10V

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

1.79W Ta

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 25V

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Published :

2008

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

12.6A

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

FET Type :

P-Channel

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Mounting Type :

Surface Mount