BSO104N03S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.56W Ta

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

9.7m Ω @ 13A, 10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0097Ohm

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 30μA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Power Dissipation :

1.56W

Vgs (Max) :

±20V

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Rise Time :

4.2ns

Turn On Delay Time :

5 ns

Drain to Source Breakdown Voltage :

30V

Series :

OptiMOS™

Terminal Form :

Gull wing

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

MS-012AA

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Feedback Cap-Max (Crss) :

110 pF

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

Qualification Status :

Not Qualified

Voltage - Rated DC :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

10A

RoHS Status :

RoHS Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

4.2 ns

Current Rating :

13A

Turn-Off Delay Time :

21 ns

Number of Pins :

8

Number of Terminations :

8

Published :

2006

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 15V