BSO150N03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

8

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation :

1.4W

FET Feature :

Standard

Turn-Off Delay Time :

21 ns

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.015Ohm

Rise Time :

4ns

Number of Terminations :

8

Feedback Cap-Max (Crss) :

100 pF

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Fall Time (Typ) :

4 ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Number of Elements :

2

Pin Count :

8

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 25μA

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 15V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Published :

2008

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

JESD-609 Code :

e3

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

7.6A

Max Power Dissipation :

1.4W

Base Part Number :

BSO150N03

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

15m Ω @ 9.1A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated DC :

30V

Mounting Type :

Surface Mount

JEDEC-95 Code :

MS-012AA

Current Rating :

9.1A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260