BSO130N03MSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Number of Terminals :

8

Power Dissipation (Max) :

1.56W (Ta)

Drain-source On Resistance-Max :

0.013 Ω

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Surface Mount :

yes

FET Feature :

-

DS Breakdown Voltage-Min :

30 V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

13mOhm @ 11.1A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C ~ 150°C (TJ)

Pin Count :

8

Drain Current-Max (Abs) (ID) :

9 A

Supplier Device Package :

PG-DSO-8

Peak Reflow Temperature (Cel) :

260

Series :

OptiMOS™ 3

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 15 V

Power Dissipation-Max (Abs) :

2.5 W

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 10 V

Operating Mode :

ENHANCEMENT MODE

Technology :

MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

9A (Ta)

Transistor Element Material :

SILICON

Manufacturer :

Infineon Technologies AG

Product Status :

Active

FET Type :

N-Channel

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Subcategory :

FET General Purpose Power

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PDSO-G8

Drain to Source Voltage (Vdss) :

30 V

Package :

Bulk