BSO613SPVGHUMA1

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Mfr.Part #
BSO613SPVGHUMA1
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 60V 3.44A 8DSO
Stock
11,915
In Stock :
11,915

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Contact Plating :
Tin
Terminal Position :
Dual
Halogen Free :
Not Halogen Free
Current - Continuous Drain (Id) @ 25°C :
3.44A Ta
Terminal Form :
Gull wing
Pin Count :
8
Current Rating :
-3.44A
Rise Time :
11ns
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Turn-Off Delay Time :
32 ns
Height :
1.75mm
Manufacturer Package Identifier :
PG-SO 8
Drain to Source Voltage (Vdss) :
60V
Turn On Delay Time :
10 ns
Power Dissipation :
2.5W
Max Dual Supply Voltage :
-60V
Threshold Voltage :
-3V
Input Capacitance (Ciss) (Max) @ Vds :
875pF @ 25V
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
2.5W Ta
Packaging :
Tape and Reel (TR)
Series :
SIPMOS®
ECCN Code :
EAR99
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
20V
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
130m Ω @ 3.44A, 10V
Factory Lead Time :
26 Weeks
Number of Elements :
1
FET Type :
P-Channel
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
-60V
Number of Channels :
1
Published :
1999
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Lead Free :
Lead Free
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
4V @ 1mA
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Voltage - Rated DC :
-60V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
8
JESD-609 Code :
e3
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
-3.44A
Number of Pins :
8
Datasheets
BSO613SPVGHUMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSO613SPVGHUMA1 from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, Number of Pins:8, BSO613SPVGHUMA1 pinout, BSO613SPVGHUMA1 datasheet PDF, BSO613SPVGHUMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSO613SPVGHUMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSO613SPVGHUMA1


P-Channel Tape & Reel (TR) 130m Ω @ 3.44A, 10V ±20V 875pF @ 25V 30nC @ 10V 60V 8-SOIC (0.154, 3.90mm Width)

BSO613SPVGHUMA1 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 875pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -3.44A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 32 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by -60V, it supports the maximal dual supply voltage.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -3V threshold voltage. Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

BSO613SPVGHUMA1 Features


a continuous drain current (ID) of -3.44A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 32 ns
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)


BSO613SPVGHUMA1 Applications


There are a lot of Infineon Technologies
BSO613SPVGHUMA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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