BSO613SPVGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

Infineon Technologies

Gate-Source Voltage (Max) :

±20(V)

Operating Temperature Classification :

Military

Rds On (Max) @ Id, Vgs :

130mOhm @ 3.44A, 10V

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

3.44A (Ta)

Type :

Small Signal

Number of Elements :

1

Rad Hardened :

No

Vgs (Max) :

±20V

Product Category :

MOSFET

Mounting Style :

SMD/SMT

Manufacturer :

Infineon

Series :

Automotive, AEC-Q101, SIPMOS®

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

MOSFET

Supplier Device Package :

PG-DSO-8-6

FET Type :

P-Channel

Rise Time :

11 ns

Polarity :

P

RoHS :

Details

Transistor Type :

1 P-Channel

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Mounting Type :

Surface Mount

Power Dissipation :

2.5(W)

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Operating Temp Range :

-55C to 150C

Drain to Source Voltage (Vdss) :

60 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Channel Mode :

Enhancement

Continuous Drain Current :

3.44(A)

Power Dissipation (Max) :

2.5W (Ta)

Technology :

Si

Base Product Number :

BSO613

Drain-Source On-Volt :

60(V)

Subcategory :

MOSFETs

Packaging :

Tape and Reel

Factory Lead Time :

26 Weeks

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Package / Case :

SOIC-8

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

875 pF @ 25 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Channels :

1 Channel

Transistor Polarity :

P-Channel