BSO615CGHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

22.5nC @ 10V

Terminal Form :

Gull wing

Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Rds On (Max) @ Id, Vgs :

110m Ω @ 3.1A, 10V

Contact Plating :

Tin

Terminal Position :

Dual

Additional Feature :

AVALANCHE RATED

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

47 mJ

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.11Ohm

Halogen Free :

Not Halogen Free

Number of Terminations :

8

Factory Lead Time :

26 Weeks

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Series :

SIPMOS®

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

3.1A

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

FET Type :

N and P-Channel

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

Base Part Number :

BSO615

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

60V

Published :

1999

Current - Continuous Drain (Id) @ 25°C :

3.1A 2A

ECCN Code :

EAR99

Pin Count :

8

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 20μA