BSP16T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

-2V

Number of Elements :

1

Current - Collector Cutoff (Max) :

50μA

Emitter Base Voltage (VEBO) :

6V

Max Breakdown Voltage :

40V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA 10V

Frequency :

15MHz

Gain Bandwidth Product :

15MHz

Max Power Dissipation :

1.5W

Base Part Number :

BSP16

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

2V @ 5mA, 50mA

Pin Count :

4

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-300V

Transistor Element Material :

SILICON

Polarity/Channel Type :

PNP

Lead Free :

Lead Free

Case Connection :

COLLECTOR

Element Configuration :

Single

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Height :

1.75mm

Max Collector Current :

100mA

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

30

Collector Emitter Voltage (VCEO) :

300V

Transistor Type :

PNP

Factory Lead Time :

2 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Width :

3.7mm

Collector Base Voltage (VCBO) :

350V

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Number of Pins :

4

Current Rating :

-1A

Number of Terminations :

4

Published :

2004

Radiation Hardening :

No

Power Dissipation :

1.5W

Collector Emitter Breakdown Voltage :

300V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Pbfree Code :

yes

Transition Frequency :

15MHz

Length :

6.7mm