BSP52T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

4

Collector Emitter Breakdown Voltage :

80V

Transistor Type :

NPN - Darlington

Number of Elements :

1

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Published :

1997

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pbfree Code :

yes

Width :

3.5mm

Current Rating :

1A

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Surface Mount :

yes

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Length :

6.5mm

Height :

1.57mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

80V

Factory Lead Time :

12 Weeks

Number of Pins :

4

Polarity :

NPN

Package / Case :

TO-261-4, TO-261AA

Pin Count :

4

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

1.3V @ 500μA, 500mA

Case Connection :

COLLECTOR

Max Breakdown Voltage :

80V

Base Part Number :

BSP52

REACH SVHC :

No SVHC

Continuous Collector Current :

1A

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

1.3V

Power Dissipation :

800mW

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Element Configuration :

Single

Voltage - Rated DC :

80V

Collector Base Voltage (VCBO) :

90V

Max Collector Current :

1A

Max Power Dissipation :

800mW

Halogen Free :

Halogen Free

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA 10V

Operating Temperature :

-65°C~150°C TJ

Current - Collector Cutoff (Max) :

10μA