BSP52T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

1.25W

Width :

3.5mm

Current - Collector Cutoff (Max) :

10μA

Base Part Number :

BSP52

Surface Mount :

yes

Operating Temperature :

-65°C~150°C TJ

Number of Terminations :

4

Max Power Dissipation :

800mW

Voltage - Rated DC :

80V

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Transistor Type :

NPN - Darlington

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Published :

1997

Current Rating :

1A

Collector Base Voltage (VCBO) :

90V

Package / Case :

TO-261-4, TO-261AA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Element Configuration :

Single

Length :

6.5mm

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

80V

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

1.3V

Vce Saturation (Max) @ Ib, Ic :

1.3V @ 500μA, 500mA

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA 10V

JESD-609 Code :

e3

Height :

1.57mm

Halogen Free :

Halogen Free

REACH SVHC :

No SVHC

Polarity :

NPN

Radiation Hardening :

No

Max Breakdown Voltage :

80V

Pbfree Code :

yes

Factory Lead Time :

11 Weeks

Number of Pins :

4

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

80V

Pin Count :

4

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Max Collector Current :

1A

ECCN Code :

EAR99