BSP613PH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 25V

Series :

SIPMOS®

Packaging :

Cut Tape (CT)

Mount :

Surface Mount

Turn On Delay Time :

6.7 ns

Drain to Source Voltage (Vdss) :

60V

Height :

1.5mm

Turn-Off Delay Time :

26 ns

Length :

40mm

Halogen Free :

Halogen Free

Number of Pins :

4

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant

Current Rating :

-2.9A

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Supplier Device Package :

PG-SOT223-4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

9ns

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Number of Elements :

1

Max Operating Temperature :

150°C

Input Capacitance :

875pF

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.8W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

-60V

Rds On (Max) @ Id, Vgs :

130mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Channels :

1

Factory Lead Time :

10 Weeks

Drain to Source Resistance :

110mOhm

Continuous Drain Current (ID) :

2.9A

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

-60V

Fall Time (Typ) :

7 ns

Package / Case :

TO-261-4, TO-261AA

Rds On Max :

130 mΩ

Power Dissipation-Max :

1.8W Ta

Max Dual Supply Voltage :

-60V

Width :

40mm

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Published :

2003

Mounting Type :

Surface Mount

FET Type :

P-Channel

Element Configuration :

Single