BSP613PL6327HUSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Package / Case :

TO-261-4, TO-261AA

Radiation Hardening :

No

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

130mOhm @ 2.9A, 10V

Series :

SIPMOS®

Power Dissipation-Max :

1.8W Ta

Number of Pins :

4

Rds On Max :

130 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

875pF

Power Dissipation :

1.8W

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.9A

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 25V

Fall Time (Typ) :

7 ns

Published :

2003

Supplier Device Package :

PG-SOT223-4

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

26 ns

RoHS Status :

RoHS Compliant

Rise Time :

9ns

Number of Elements :

1

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Turn On Delay Time :

6.7 ns