BSP613PL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage Rating (DC) :

-60 V

Terminal Position :

Dual

ECCN Code :

EAR99

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

2.9 A

Transistor Application :

SWITCHING

Input Capacitance :

875 pF

Series :

*

Subcategory :

Other Transistors

Case Connection :

DRAIN

Number of Pins :

4

Power Dissipation :

1.8 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Package Shape :

RECTANGULAR

Max Power Dissipation :

1.8 W

Drain to Source Voltage (Vdss) :

60 V

Rise Time :

9 ns

Surface Mount :

yes

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

150 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

60 V

Number of Terminals :

4

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

11.6 A

Max Operating Temperature :

150 °C

DS Breakdown Voltage-Min :

60 V

Nominal Vgs :

-3 V

Pin Count :

4

Reach Compliance Code :

Compliant

Min Operating Temperature :

-55 °C

Rds On Max :

130 mΩ

Qualification Status :

Not Qualified

Polarity/Channel Type :

P-Channel

Manufacturer :

Infineon Technologies AG

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2.9 A

Pbfree Code :

yes

Turn-Off Delay Time :

26 ns

HTS Code :

8541.29.00.95

Gate to Source Voltage (Vgs) :

20 V

Number of Elements :

1

JESD-30 Code :

R-PDSO-G4

Drain-source On Resistance-Max :

0.13 Ω

RoHS :

Compliant

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Turn-On Delay Time :

6.7 ns

Threshold Voltage :

-3 V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

1.8 W

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Package :

Bulk

Drain to Source Resistance :

130 mΩ

Mount :

Surface Mount

Current Rating :

-2.9 A