BSP88L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

240 V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rds On Max :

6 Ω

Supplier Device Package :

PG-SOT223-4-21

Additional Feature :

LOGIC LEVEL COMPATIBLE

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

240 V

Terminal Form :

Gull wing

Min Operating Temperature :

-55 °C

Package / Case :

TO-261-4, TO-261AA

Radiation Hardening :

No

Turn-On Delay Time :

3.6 ns

Operating Temperature :

-55°C ~ 150°C (TJ)

Lead Free :

Lead Free

Package Shape :

RECTANGULAR

Number of Elements :

1

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1 V

Mounting Type :

Surface Mount

Product Status :

Active

HTS Code :

8541.29.00.95

Pulsed Drain Current-Max (IDM) :

1.4 A

Power Dissipation-Max (Abs) :

1.8 W

Mount :

Surface Mount

Turn-Off Delay Time :

17.9 ns

Continuous Drain Current (ID) :

350 mA

Technology :

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs :

6Ohm @ 350mA, 10V

Number of Pins :

4

FET Feature :

-

Terminal Position :

Dual

RoHS :

Compliant

Current - Continuous Drain (Id) @ 25°C :

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

2.8V, 10V

Pin Count :

4

Series :

SIPMOS®

Case Connection :

DRAIN

Max Power Dissipation :

1.8 W

Package :

Bulk

Subcategory :

FET General Purpose Power

Gate Charge (Qg) (Max) @ Vgs :

6.8 nC @ 10 V

ECCN Code :

EAR99

Voltage Rating (DC) :

240 V

Drain to Source Resistance :

6 Ω

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

240 V

Number of Terminals :

4

Surface Mount :

yes

Power Dissipation (Max) :

1.8W (Ta)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

Infineon Technologies AG

JESD-30 Code :

R-PDSO-G4

Drain Current-Max (Abs) (ID) :

0.35 A

Vgs(th) (Max) @ Id :

1.4V @ 108µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

150 °C

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Input Capacitance :

95 pF

Input Capacitance (Ciss) (Max) @ Vds :

95 pF @ 25 V

Rise Time :

3.5 ns

Current Rating :

350 mA

Gate to Source Voltage (Vgs) :

20 V

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

6 Ω

Power Dissipation :

1.8 W