BSP89 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

6Ohm

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Drain to Source Voltage (Vdss) :

240V

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6 Ω @ 350mA, 10V

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Series :

SIPMOS®

DS Breakdown Voltage-Min :

240V

Pulsed Drain Current-Max (IDM) :

1.4A

Case Connection :

DRAIN

Terminal Finish :

MATTE TIN

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

1.8W Ta

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.8V @ 108μA

Pin Count :

4

HTS Code :

8541.29.00.75

Published :

2007

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G4

Drain Current-Max (Abs) (ID) :

0.35A