BSP89H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-261-4, TO-261AA

Turn On Delay Time :

4 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

SIPMOS®

Vgs(th) (Max) @ Id :

1.8V @ 108μA

Element Configuration :

Single

Contact Plating :

Tin

Mounting Type :

Surface Mount

Threshold Voltage :

1.4V

Published :

2001

Power Dissipation :

1.7W

Drain-source On Resistance-Max :

6Ohm

Pbfree Code :

yes

Halogen Free :

Halogen Free

Power Dissipation-Max :

1.8W Ta

Terminal Position :

Dual

Additional Feature :

LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

18.4 ns

Dual Supply Voltage :

240V

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Case Connection :

DRAIN

Vgs (Max) :

±20V

JESD-609 Code :

e3

Width :

6.7mm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Turn-Off Delay Time :

15.9 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Length :

6.5mm

Pin Count :

4

Continuous Drain Current (ID) :

360mA

Factory Lead Time :

10 Weeks

Operating Temperature :

-55°C~150°C TJ

Rise Time :

3.5ns

Mount :

Surface Mount

Termination :

SMD/SMT

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

6 Ω @ 350mA, 10V

Packaging :

Tape and Reel (TR)

Weight :

250.212891mg

Height :

1.6mm

ECCN Code :

EAR99

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.35A

REACH SVHC :

No SVHC

Number of Pins :

4

Nominal Vgs :

1.4 V

Max Dual Supply Voltage :

240V

Number of Channels :

1

Drain to Source Breakdown Voltage :

240V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant