BSS670S2L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 2.7μA

Rds On (Max) @ Id, Vgs :

650m Ω @ 270mA, 10V

Drain Current-Max (Abs) (ID) :

0.54A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

Vgs (Max) :

±20V

JESD-609 Code :

e3

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation-Max :

360mW Ta

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

540mA Ta

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 25V

Terminal Position :

Dual

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

55V

Surface Mount :

yes

Pin Count :

3

Drain to Source Voltage (Vdss) :

55V

RoHS Status :

RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.825Ohm

Gate Charge (Qg) (Max) @ Vgs :

2.26nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2003

Series :

OptiMOS™

Feedback Cap-Max (Crss) :

10 pF

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.95

Number of Terminations :

3