BSS670S2LH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Rise Time :

25ns

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

SOT-23

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Vgs (Max) :

±20V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

10 Weeks

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

540mA

Feedback Cap-Max (Crss) :

10 pF

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.825Ohm

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

55V

Drain Current-Max (Abs) (ID) :

0.54A

Max Operating Temperature :

150°C

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE