DTD113ZCT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Element Material :

SILICON

Power - Max :

200mW

Max Power Dissipation :

200mW

VCEsat-Max :

0.3 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 50mA 5V

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Collector Emitter Voltage (VCEO) :

300mV

Max Breakdown Voltage :

50V

Max Collector Current :

500mA

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10

Transition Frequency :

200MHz

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Factory Lead Time :

13 Weeks

Operating Temperature (Max) :

150°C

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2016

JESD-30 Code :

R-PDSO-G3

Polarity/Channel Type :

NPN

Pin Count :

3

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Frequency - Transition :

200MHz

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Elements :

1

Resistor - Emitter Base (R2) :

10 k Ω

Resistor - Base (R1) :

1 k Ω

Transistor Type :

NPN - Pre-Biased