DTD113ZUT106

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

300mV

Power Dissipation :

200mW

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Frequency - Transition :

200MHz

HTS Code :

8541.21.00.75

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

DTD113

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

JESD-609 Code :

e1

ECCN Code :

EAR99

Package / Case :

SC-70, SOT-323

Lead Free :

Lead Free

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

10 k Ω

Pin Count :

3

Terminal Form :

Gull wing

Number of Terminations :

3

Element Configuration :

Single

Factory Lead Time :

13 Weeks

Mounting Type :

Surface Mount

Max Collector Current :

500mA

Current Rating :

500mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Voltage - Rated DC :

50V

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 50mA 5V

RoHS Status :

ROHS3 Compliant

Published :

1998

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Resistor - Base (R1) :

1 k Ω

Pbfree Code :

yes

Number of Pins :

3

Transition Frequency :

200MHz

Transistor Type :

NPN - Pre-Biased

Max Power Dissipation :

200mW

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

10

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

hFE Min :

82

Polarity :

NPN